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DC COMPONENTS CO., LTD.
R
M28S
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in general purpose "Speech Synthesizer" (Voice ROM) IC audio output driver stage amplifier applications.
TO-92
.190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Pinning
3 = Emitter 1 = Collector 2 = Base
Absolute Maximum Ratings(TA=25
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC IB PD TJ TSTG
o
C) Rating 40 20 6 1.25 0.4 850 +150 -55 to +150 Unit V V V A A mW
o o
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
Symbol
.050 Typ (1.27)
321
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE1 hFE2 hFE3 hFE4 fT Cob 380s, Duty Cycle
Min 40 20 6 290 300 300 300 100 2%
Typ 9
Max 0.1 0.1 0.55 1000 -
Unit V V V A A V MHz pF
Test Conditions IC=100A, IE=0 IC=1mA, IB=0 IE=100A, IC=0 VCB=35V, IE=0 VEB=6V, IC=0 IC=600mA, IB=20mA IC=1mA, VCE=1V IC=0.1A, VCE=1V IC=0.3A, VCE=1V IC=0.5A, VCE=1V IC=50mA, VCE=10V, f=1MHz VCB=10V, f=1MHz, IE=0
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current EmitterCutoff Current Collector-Emitter Saturation Voltage(1)
DC Current Gain(1)
Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
Classification of hFE2
Rank Range B 300~550 C 500~700 D 650~1000

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